Specification of Multi-crystalline Silicon Wafer
Conductivity Type: P-Type
Crystallinity :Multi-crystalline
Crystal size :≤50 crystals per 2 cm2
Oxygen （atoms/cm3）: ≤8.0 x 1017
Carbon （atoms/cm3）: ≤5.0x 1017
Resistivity (Ω·cm): 0.5～2.0
Dopant: Boron
Life time（μs） : ≥2.0
Dimensions Tolerance （mm) :156x156 ±0.5
Wafer dull （mm) :1.5±0.5
Center Thickness （μm) :200±20
Total Thickness Variation （μm): ≤20
Warp（μm）: ≤40
Wafer cleaning :Water+detergent
Water slicing:Glycol based wafering
Saw marks（μm）:Depth ≤15
Edge defect(through wafer) Length ≤5 mm,width ≤0.5 mm
packaging bubble:carton and wooden box
Payment:T/T,L/C
Supply Ability:10,000,000 pcs/month
Pcakage:1800 pcs/carton
300 pcs/box
